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Extremely Accurate I2C RTC with
Integrated Crystal and SRAM
ELECTRICAL CHARACTERISTICS (continued)
(VCC = 2.3V to 5.5V, VCC = active supply (see Table 1), TA = -40°C to +85°C, unless otherwise noted.) (Typical values are at VCC =
3.3V, VBAT = 3.0V, and TA = +25°C, unless otherwise noted.) (Notes 2, 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Logic 0 Output, INT/SQW, SDA
VOL
IOL = 3mA
0.4
V
Logic 0 Output, RST, 32kHz
VOL
IOL = 1mA
0.4
V
Output Leakage Current 32kHz,
INT/SQW, SDA
ILO
Output high impedance
-1
0
+1
A
Input Leakage SCL
ILI
-1
+1
A
RST Pin I/O Leakage
IOL
RST high impedance (Note 6)
-200
+10
A
TCXO
Output Frequency
fOUT
VCC = 3.3V or VBAT = 3.3V
32.768
kHz
Duty Cycle
(Revision A3 Devices)
2.97V ≤ VCC < 3.63
31
69
%
0°C to +40°C
-2
+2
Frequency Stability vs.
Temperature
Δf/fOUT
VCC = 3.3V or
VBAT = 3.3V
-40°C to 0°C and
+40°C to +85°C
-3.5
+3.5
ppm
Frequency Stability vs. Voltage
Δf/V
VCC = 3.3V or VBAT = 3.3V
1
ppm/V
-40°C
0.7
+25°C
0.1
+70°C
0.4
Trim Register Frequency
Sensitivity per LSB
Δf/LSB
Specified at:
+85°C
0.8
ppm
Temperature Accuracy
Temp
VCC = 3.3V or VBAT = 3.3V
-3
+3
°C
First year
±1.0
Crystal Aging
Δf/f0
After reflow,
not production tested
0–10 years
±5.0
ppm
ELECTRICAL CHARACTERISTICS
(VCC = 0V, VBAT = 2.3V to 5.5V, TA = -40°C to +85°C, unless otherwise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
VBAT = 3.3V
80
Active Battery Current
(Note 5)
IBATA
EOSC = 0, BBSQW = 0,
SCL = 400kHz, BB32kHz = 0
VBAT = 5.5V
200
A
VBAT = 3.4V
1.5
2.5
Timekeeping Battery Current
(Note 5)
IBATT
EOSC = 0, BBSQW = 0,
SCL = SDA = 0V,
BB32kHz = 0,
CRATE0 = CRATE1 = 0
VBAT = 5.5V
1.5
3.0
A
Temperature Conversion Current
IBATTC
EOSC = 0, BBSQW = 0, SCL = SDA = 0V
600
A
Data-Retention Current
IBATTDR
EOSC = 1, SCL = SDA = 0V, +25°C
100
nA
DS3232
3
Maxim Integrated
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